HEF4011BP

2-input NAND gate, DIP-14, 2.4mA, 3 V ~ 15 V, RoHS Compliant

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Price:: US $0.10~0.15 / piece [Get Latest Price]

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	US $0.10~0.15

PartNumber:: HEF4011BP

Brand:: NXP Semiconductors - nxp | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-11

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Part Number:HEF4011BP
US $0.10 - 0.15
ECA1HHG100

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Product Summary

The HEF4011BP is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise immunity and pattern insensitivity to output impedance. The HEF4011BP operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.

Parametrics

HEF4011BP absolute maximum ratings: (1)VDD, supply voltage: -0.5 +18 V; (2)IIK, input clamping current: ±10 mA; (3)VI, input voltage: -0.5 to VDD + 0.5 V; (4)IOK, output clamping current: ±10 mA; (5)II/O, input/output current: ±10 mA; (6)IDD, supply current: 50 mA; (7)Tstg, storage temperature: -65 +150℃; (8)Tamb, ambient temperature: -40 +125℃; (9)Ptot, total power dissipation: 500mW; (10)Ptot, power dissipation per output: 100 mW.

Features

HEF4011BP features: (1)Fully static operation; (2)5 V, 10 V, and 15 V parametric ratings; (3)Standardized symmetrical output characteristics; (4)Specified from -40 to +125℃; (5)Complies with JEDEC standard JESD 13-B; (6)Inputs and outputs are protected against electrostatic effects.