(China (Mainland))
Product Summary
The PBSS5160T is a PNP low VCEsat (BISS) transistor. The applications of the device include Major application segments: Automotive; Telecom infrastructure; Industrial; Power management: DC-to-DC conversion; Supply line switching; Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs); Inductive load driver (e.g. relays, buzzers and motors).
Parametrics
PBSS5160T absolute maximum ratings: (1)VCEO, collector-emitter voltage: -60 V; (2)IC, collector current (DC): -1A; (3)ICM, peak collector current: -2A; (4)RCEsat, equivalent on-resistance: 330 mΩ.
Features
PBSS5160T features: (1)Low collector-emitter saturation voltage VCEsat; (2)High collector current capability: IC and ICM; (3)High efficiency, reduces heat generation; (4)Reduces printed-circuit board area required; (5)Cost effective replacement for medium power transistors BCP52 and BCX52.
Diagrams
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Pricing (USD) |
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 PBSS5160T |
Other |
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Data Sheet |
Negotiable |
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PBSS5160T T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS BISS TAPE-7 |
Data Sheet |
Negotiable |
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PBSS5160T,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS BISS TAPE-7 |
Data Sheet |
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