Product Summary

The BSL211SP is a Small-Signal-Transistor.

Parametrics

BSL211SP absolute maximum ratings: (1)Continuous drain current, ID: -4.7A at TA=25℃; -3.8A at TA=70℃; (2)Pulsed drain current, ID puls: -18.8A at TA=25℃; (3)Avalanche energy, single pulse, ID=-4.7 A , VDD=-10V, RGS=25Ω, EAS: 26 mJ; (4)Reverse diode dv/dt, IS=-4.7A, VDS=-16V, di/dt=200A/μs, Tjmax=150℃, dv/dt: -6 kV/μs; (5)Gate source voltage, VGS: ±12 V; (6)Power dissipation, TA=25℃, Ptot: 2 W; (7)Operating and storage temperature, Tj, Tstg: -55 to +150℃; (8)IEC climatic category; DIN IEC 68-1: 55/150/56.

Features

BSL211SP features: (1)P-Channel; (2)Enhancement mode; (3)Super Logic Level (2.5 V rated); (4)150℃ operating temperature; (5)Avalanche rated; (6)dv/dt rated.

Diagrams

BSL211SP block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSL211SP
BSL211SP
Infineon Technologies
MOSFET P-CH -20 V -4.7 A
Data Sheet
Negotiable 
BSL211SP L6327
BSL211SP L6327
Infineon Technologies
MOSFET P-CH -20 V -4.7 A
Data Sheet
0-1: $0.41
1-10: $0.33
10-100: $0.25
100-250: $0.19
BSL211SPT
BSL211SPT

MOSFET P-CH 20V 4.7A 6-TSOP
Data Sheet
0-1: $0.31
1-10: $0.24
10-25: $0.21
25-100: $0.18
100-250: $0.16
250-500: $0.14
500-1000: $0.11