Product Summary

The AOD407 is a P-Channel Enhancement Mode Field Effect Transistor. The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD407 is Pb-free (meets ROHS & Sony 259 specifications).

Parametrics

AOD407 absolute maximum ratings: (1)drain-source voltage, VDS: -60V; (2)gate-source voltage, VGS: ±20V; (3)continuous drain current, ID: -12A at Tc=25℃; -10A at Tc=100℃; (4)pulsed drain current, IDM: -30A; (5)avalanche current, IAR: -12A; (6)repetitive avalanche energy L=0.1mH, EAR: 23mJ; (7)power dissipation, PD: 50W at Tc=25℃; 25W at Tc=100℃; (8)power dissipation, PDSM: 2.5W at Ta=25℃; 1.6W at Ta=70℃; (9)junction and storage temperature range, Tj, Tstg: -55 to 175℃.

Features

AOD407 features: (1)VDS (V) = -60V; (2)ID = -12A (VGS = -10V); (3)RDS(ON) < 115mΩ (VGS = -10V); (4)RDS(ON) < 150mΩ (VGS = -4.5V).

Diagrams

AOD407 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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AOD407
AOD407


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Data Sheet

0-1: $0.44
1-25: $0.34
25-100: $0.30
100-250: $0.26
250-500: $0.22
500-1000: $0.18
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100-250: $0.42
250-500: $0.38
500-1000: $0.30
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